Datasheet4U Logo Datasheet4U.com

TSM2N7002E - 50V N-Channel Enhancement Mode MOSFET

Features

  • Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Block Diagram Ordering Information Part No. TSM2N7002ECX TSM2N7002ECU Packing T&R (3kpcs/Reel) Package SOT-23 SOT-323 Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drai.

📥 Download Datasheet

Datasheet preview – TSM2N7002E

Datasheet Details

Part number TSM2N7002E
Manufacturer Taiwan Semiconductor Company
File Size 234.54 KB
Description 50V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet TSM2N7002E Datasheet
Additional preview pages of the TSM2N7002E datasheet.

📁 Similar Datasheet

  • TSM2N7002KD - 60V N-Channel MOSFET (Taiwan Semiconductor)
  • TSM2NB60 - 600V N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM2NB60CH - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM2NB60CP - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM200 - Surface Mount Devices (SPSEMI)
  • TSM200N03D - Dual N-Channel MOSFET (Taiwan Semiconductor)
  • TSM20N50 - 500V N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM20N50CN - 500V N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM210N02CX - N-Channel Power MOSFET (Taiwan Semiconductor)
  • TSM210N06 - N-Channel Power MOSFET (Taiwan Semiconductor)
Other Datasheets by Taiwan Semiconductor Company
  • TSM2N7002 - 60V N-Channel Enhancement Mode MOSFET
  • TSM2N7002K - 60V N-Channel MOSFET
  • TSM2N7000 - 60V N-Channel Enhancement Mode MOSFET
  • TSM2N7000K - 60V N-Channel MOSFET
  • TSM2N70 - 60V N-Channel Enhancement Mode MOSFET
  • TSM2N60 - N-CHANNEL POWER ENHANCEMENT MODE MOSFET
  • TSM2N60S - 600V N-Channel Power MOSFET
  • TSM2301 - 20V P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
TSM2N7002E 50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Block Diagram Ordering Information Part No.
Published: |