Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package
Block Diagram
Ordering Information
Part No. TSM2N7002ECX TSM2N7002ECU Packing T&R (3kpcs/Reel) Package SOT-23 SOT-323
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drai.
Full PDF Text Transcription for TSM2N7002E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TSM2N7002E. For precise diagrams, and layout, please refer to the original PDF.
V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω www.DataSheet4U.com Features Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-363 package Block Diagram Ordering Information Part No.
TSM2N7002E Datasheet
