TSM2N7002E Datasheet | Taiwan Semiconductor Company

50V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 50V RDS (on), Vgs @ 10V, Ids @ 250mA = 3Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 4Ω .. Features Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic patible input No secondary breakdown pact and low profile SOT-363 package Block Diagram Ordering Information Part No. TSM2N7002ECX TSM2N7002ECU Packing T&R (3kpcs/Reel) Package SOT-23...