Download TSM300NB06CR Datasheet PDF
Taiwan Semiconductor
TSM300NB06CR
TSM300NB06CR is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES - Low RDS(ON) to minimize conductive losses - Low gate charge for fast power switching - 100% UIS and Rg tested. - 175°C Operating Junction Temperature - pliant to Ro HS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VGS = 10V 30 mΩ Qg 18 n C APPLICATIONS - BLDC Motor Control - Battery Power Management - DC-DC converter - Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current (Note 1) TC = 25°C TA = 25°C 27 6 Pulsed Drain Current Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2) Total Power Dissipation TC = 25°C TC = 125°C Total Power Dissipation TA = 25°C TA =...