TSM300NB06CR
TSM300NB06CR is N-Channel Power MOSFET manufactured by Taiwan Semiconductor.
FEATURES
- Low RDS(ON) to minimize conductive losses
- Low gate charge for fast power switching
- 100% UIS and Rg tested.
- 175°C Operating Junction Temperature
- pliant to Ro HS directive 2011/65/EU and in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on) (max) VGS = 10V
30 mΩ
Qg
18 n C
APPLICATIONS
- BLDC Motor Control
- Battery Power Management
- DC-DC converter
- Secondary Synchronous Rectification
PDFN56
Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage Gate-Source Voltage
±20
Continuous Drain Current (Note 1)
TC = 25°C TA = 25°C
27 6
Pulsed Drain Current
Single Pulse Avalanche Current (Note 2) Single Pulse Avalanche Energy (Note 2)
Total Power Dissipation
TC = 25°C TC = 125°C
Total Power Dissipation
TA = 25°C TA =...