TSM2302 - 20V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Features

Advance Trench Process Technology.
High Density Cell Design for Ultra Low On-resistance.

Taiwan Semiconductor Company

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Datasheet Details

Part number	TSM2302
Manufacturer	Taiwan Semiconductor Company
File Size	621.93 KB
Description	20V N-Channel Enhancement Mode MOSFET
Datasheet	TSM2302 Datasheet
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TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = 4.5V VGS = 2.5V Qg 20 65 95 5.4 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No.

Published: Jun 25, 2008 |