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Thinki Semiconductor

2SA1694 Datasheet Preview

2SA1694 Datasheet

Silicon PNP Epitaxial Planar Transistor

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2SA1694
®
Pb Free Plating Product
2SA1694
Silicon PNP Epitaxial Planar Transistor
Pb
Silicon PNP Power Transistors
2SA1694
DESCRIPTION
·With TO-3PI package
·Complement to type 2SC4467
APPLICATIONS
·Audio and general purpose
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
3
12
Fig.1 simplified outline (TO-3PI) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
Tc=25
VALUE
-120
-120
-6
-8
-3
80
150
-55~150
UNIT
V
V
V
A
A
W
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/4
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/




Thinki Semiconductor

2SA1694 Datasheet Preview

2SA1694 Datasheet

Silicon PNP Epitaxial Planar Transistor

No Preview Available !

2SA1694
®
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
COB Output capacitance
fT Transition frequency
VCB=-120V; IE=0
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.5A ; VCE=-12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=-4A;RL=10B
IB1=- IB2=-0.4A
VCC=-40V
hFE Classifications
OP
Y
50-100
70-140
90-180
2SA1694
MIN TYP. MAX UNIT
-120
V
-1.5 V
-10 µA
-10 µA
50 180
300 pF
20 MHz
0.14 µs
1.40 µs
0.21 µs
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/4
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/


Part Number 2SA1694
Description Silicon PNP Epitaxial Planar Transistor
Maker Thinki Semiconductor
Total Page 4 Pages
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