IRF3205 - N-Channel Trench Process Power MOSFET Transistor

Thinki Semiconductor

General Description

The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching .

Key Features

VDS=55V; ID=105A@ VGS=10V; RDS(ON).

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IRF3205 n-channel trench process power mosfet transistor by Thinki Semiconductor - Datasheet Preview

Datasheet Details

Part number	IRF3205
Manufacturer	Thinki Semiconductor
File Size	897.94 KB
Description	N-Channel Trench Process Power MOSFET Transistor
Datasheet	IRF3205 Datasheet

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IRF3205 ® Pb Free Plating Product IRF3205 Pb N-Channel Trench Process Power MOSFET Transistor General Description The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features ● VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply ● Inverter Application G DS TO-220CB Top View Schematic Diagram VDS = 55 V ID = 105 A RDS(ON) = 5.0 mΩ Table 1.