IRF3205 Description
The IRF3205 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
IRF3205 Key Features
- VDS=55V; ID=105A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Inverter Application