IRF730PBF Key Features
- RDS(on) (Max 1 Ω )@VGS=10V
- Gate Charge (Typical 32nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
IRF730PBF is N-Channel Type Power MOSFET manufactured by Thinki Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
International Rectifier |
IRF730PBF | Power MOSFET |
NXP Semiconductors |
IRF730 | PowerMOS transistor |
STMicroelectronics |
IRF730 | N-Channel Power MOSFET |
Intersil |
IRF730 | N-Channel Power MOSFET |
| IRF730 | N-Channel Power MOSFET |
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.