n-channel type power mosfet.
* RDS(on) (Max 1 Ω )@VGS=10V
* Gate Charge (Typical 32nC)
* Improved dv/dt Capability
* High ruggedness
* 100% Avalanche Tested
IRF730PBF
Pb
6.5A,4.
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche c.
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