IRF840PBF Key Features
- RDS(on) (Max 0.85 Ω )@VGS=10V
- Gate Charge (Typical 35nC)
- Improved dv/dt Capability
- High ruggedness
- 100% Avalanche Tested
- Part: IRF840PBF
- Manufacturer: Thinki Semiconductor
- Size: 965.27 KB
Other IRF840PBF Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Vishay |
IRF840PbF | Power MOSFET |
International Rectifier |
IRF840PBF | Power MOSFET |
Advanced Power Electronics Corp |
IRF840P-HF-3 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
STMicroelectronics |
IRF840 | N-Channel Power MOSFET |
Intersil |
IRF840 | 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET |
IRF840PBF Description
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220C pkg is well suited for adaptor power unit and small power inverter application.