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MJ21194G Datasheet Preview

MJ21194G Datasheet

Metal Package Power Transistor

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MJ21193G/MJ21194G
®
Pb Free Plating Product
MJ21193G/MJ21194G
Pb
250 Watt Silicon Type Metal Package Power Transistor
The MJ21193 and MJ21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain – hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second
SCHEMATIC
PNP
NPN
CASE 3
CASE 3
CASE 1–07
TO–204AA
(TO–3)
1
BASE
1
BASE
EMITTER 2
EMITTER 2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage – 1.5 V
Collector Current — Continuous
Collector Current — Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle 10%.
VCEO(sus)
250
ICEO
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
250
1.43
āā65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Max
RθJC
0.7
Unit
°C/W
Typical
Max
Unit
Vdc
100
µAdc
(continued)
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/5
http://www.thinkisemi.com/




Thinki Semiconductor

MJ21194G Datasheet Preview

MJ21194G Datasheet

Metal Package Power Transistor

No Preview Available !

MJ21193G/MJ21194G
®
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
IEBO
100
ICEX
100
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
(VCE = 50 Vdc, t = 1 s (non–repetitive)
5
(VCE = 80 Vdc, t = 1 s (non–repetitive)
2.5
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
75
25
8
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
2.2
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.4
4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
THD
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched
0.8
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
0.08
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%
fT
4
Cob
500
Unit
µAdc
µAdc
Adc
Vdc
Vdc
%
MHz
pF
6.5
6.0 VCE = 10 V
PNP MJ21193
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJ21194
8.0
7.0
6.0
10 V
5.0
VCE = 5 V
4.0
3.0
2.0
1.0 TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/5
http://www.thinkisemi.com/



Part Number MJ21194G
Description Metal Package Power Transistor
Maker Thinki Semiconductor
Total Page 3 Pages
PDF Download

MJ21194G Datasheet PDF





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