MJ21193G/MJ21194G
®
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
IEBO
—
—
100
ICEX
—
—
100
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
IS/b
(VCE = 50 Vdc, t = 1 s (non–repetitive)
5
—
—
(VCE = 80 Vdc, t = 1 s (non–repetitive)
2.5
—
—
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)
hFE
75
25
—
8
—
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
—
—
2.2
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
—
1.4
—
—
4
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
THD
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS hFE
unmatched
—
0.8
—
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
—
0.08
—
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2%
fT
4
—
—
Cob
—
—
500
Unit
µAdc
µAdc
Adc
Vdc
Vdc
%
MHz
pF
6.5
6.0 VCE = 10 V
PNP MJ21193
5.5
5V
5.0
4.5
4.0
3.5 TJ = 25°C
ftest = 1 MHz
3.0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
NPN MJ21194
8.0
7.0
6.0
10 V
5.0
VCE = 5 V
4.0
3.0
2.0
1.0 TJ = 25°C
ftest = 1 MHz
0
0.1
1.0
10
IC COLLECTOR CURRENT (AMPS)
Figure 2. Typical Current Gain
Bandwidth Product
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 2/5
http://www.thinkisemi.com/
