900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Torex Semiconductor

XB01SB04A2BR Datasheet Preview

XB01SB04A2BR Datasheet

Schottky Barrier Diode

No Preview Available !

XB01SB04A2BR
Schottky Barrier Diode 1A, 40V Type
ETR1601_001
GENERAL DESCRIPTION
XB01SB04A2BR employs 1A level of a schottky diode in a small package equivalent to SOD-123 package. It is suitable for
compact, low profile circuit designs. By giving the series low VF and low IR characteristics, it minimizes power supply loss.
APPLICATIONS
Rectification of compact DC/DC converter
Surge absorption caused by counter force of
compact motors
Energy-saving for notebook PCs, hand-set
Protection against reverse connection of
battery
FEATURES
1A, 40V Type
Low VF 0.49V @1A (TYP.)
Low IR 4μA @40V (TYP.)
Small Package : SOD-123
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
www.DataSheet4U.com
Repetitive Peak Reverse Voltage
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous Forward Surge Current*1
Junction Temperature
VRM
VR
IF(AV)
IFSM
Tj
Storage Temperature Range
Tstg
*1: Non continuous high amplitude 60Hz half-sine wave.
RATINGS
40
40
1
10
125
-55~+150
Ta = 25
UNIT
V
V
A
A
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
LIMITS
TYP.
Forward Voltage (DC)
Reverse Current (DC)
VF
IR
IF=1A
VR=40V
0.49
4
Inter-Terminal Capacity
Ct
VR=10V, f=1MHz
35
Reverse Recovery Current *2
trr
IF=IR=10mA, irr=1mA, RL=100Ω
25
Note) 1.This product has a weakness for an electroshock such as electrostatic.
Please be careful of an electrification to human body and an electric leakage in the application.
2. *2: trr measurement circuit
MAX.
0.54
200
Ta=25
UNITS
V
μA
pF
ns
Bias
Pulse Generatrix
A
Oscilloscope
IF
trr
0
irr
IR
t
1/4




Torex Semiconductor

XB01SB04A2BR Datasheet Preview

XB01SB04A2BR Datasheet

Schottky Barrier Diode

No Preview Available !

XB01SB04A2BR
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Voltage vs. Forward Current
IF - VF
10
75
25
1
Ta=125
0.1 -20
0.01
0.001
0.0
0.1 0.2 0.3 0.4 0.5
Forw ard Voltage VF (V)
0.6
(2) Reverse Voltage vs. Reverse Current
IR - VR
10000
1000
Ta=125
100 75
10
1
0.1
0
25
10 20 30 40
Reverse Voltage VR (V)
50
(3) Ambient Temperature vs. Forward Voltage
VF - Ta
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-40
IF=1A
100mA
10mA
0 40 80 120 160
OAmpebraietintgTTeemmperattuurree:TTaa (OC))
200
(4) Ambient Temperature vs. Reverse Current
IR - Ta
10000
1000
100
VR=40V
20V
5V
10
1
0.1
-40
0 40 80 120 160
Ambient Temperature: Ta (OC)
200
(5) Reverse Voltage vs. Inter-Terminal Capacity
Ct - VR
Ta=25
300
200
100
0
0 10 20 30 40 50
Reverse Voltage VR (V)
2/4
(6) Ambient Temperature vs. Average Forward Current
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
IF(AV) - Ta
40 80 120
AOmpberieantint gTeTmemppeeraratuturree: TTaa (OC)
160


Part Number XB01SB04A2BR
Description Schottky Barrier Diode
Maker Torex Semiconductor
Total Page 4 Pages
PDF Download

XB01SB04A2BR Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 XB01SB04A2BR Schottky Barrier Diode
Torex Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy