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1SS362FV - Silicon Epitaxial Planar Type Diode

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Part number 1SS362FV
Manufacturer Toshiba
File Size 434.15 KB
Description Silicon Epitaxial Planar Type Diode
Datasheet download datasheet 1SS362FV Datasheet

Full PDF Text Transcription for 1SS362FV (Reference)

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0.5± 0. 1 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications  AEC-Q101 qualified (Note 1)  Small package  Excellent in forwar...

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ns  AEC-Q101 qualified (Note 1)  Small package  Excellent in forward current and forward voltage characteristics: VF (3) = 0.97 V (typ.)  Fast reverse recovery time: trr = 1.6 ns (typ.)  Small total capacitance: CT = 0.9 pF (typ.) Note1: For detail information, please contact our sales. 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 1SS362FV Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 1 2 3 0.13±0.05 0.5±0.