1SS362FV
0.5± 0. 1
TOSHIBA Diode Silicon Epitaxial Planar Type
Ultra-High-Speed Switching Applications
- AEC-Q101 qualified (Note 1)
- Small package
- Excellent in forward current and forward voltage characteristics:
VF (3) = 0.97 V (typ.)
- Fast reverse recovery time: trr = 1.6 ns (typ.)
- Small total capacitance: CT = 0.9 p F (typ.)
Note1: For detail information, please contact our sales.
1.2±0.05 0.8±0.05 0.4 0.4
0.22±0.05
Unit: mm
1.2±0.05 0.8±0.05
0.32±0.05
0.13±0.05
0.5±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation Junction temperature Storage temperature range
Symbol
VRM VR IFM IO IFSM P Tj Tstg
Rating
Unit
1.ANODE1
2.CATHODE2 3.CATHODE1
- m A
VESM
ANODE2
- 1-
- - 150 m...
