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1SS403E Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Switching Diodes

Description Switching Diodes Silicon Epitaxial Planar 1SS403E 1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rati...
Features (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 250 V Reverse volt...

Datasheet PDF File 1SS403E Datasheet - 171.06KB

1SS403E  






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