Description | Switching Diodes Silicon Epitaxial Planar 1SS403E 1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rati... |
Features |
(1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max)
3. Packaging and Internal Circuit
1SS403E
1: Cathode 2: Anode
ESC
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
250
V
Reverse volt...
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Datasheet | 1SS403E Datasheet - 171.06KB |