2N3713 - GENERAL PURPOSE POWER TRANSISTOR

Toshiba

Key Features

. High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max. ) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings.

2N3713 general purpose power transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2N3713
Manufacturer	Toshiba
File Size	87.23 KB
Description	GENERAL PURPOSE POWER TRANSISTOR
Datasheet	2N3713 Datasheet

Full PDF Text Transcription for 2N3713 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N3713. For precise diagrams, and layout, please refer to the original PDF.

SILICON NPN TRIPLE DIFFUSED TYPE 2N3713 GENERAL PURPOSE POWER TRANSISTOR. POWER REGULATOR, SWITCHING AND SOLENOID DRIVES APPLICATIONS. FEATURES: . High Gain at High Curre...

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AND SOLENOID DRIVES APPLICATIONS. FEATURES: . High Gain at High Current . Low Saturation Voltage : VcE(sat) =1 - ov (Max.) @ IC=5A, Ib=0.5A . Excellent Area of Safe Operatings MAXIMUM RATINGS (•Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Thermal Resistance Junction Temperature ' Storage Temperature Range SYMBOL VcBO VCEO VEBO Unit in mm Weight : 12.

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