2N4399 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Toshiba
Key Features
. Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min. ) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max. ) @ I C=-30A, I B=-6A
. Low Saturation Voltage :
VCE(sat)=-0.75V (Max. ) @ I C=-10A, Ib=-1.0A
VBE(sat)=-1.6V (Max. )
@ I C=-10A, I B=-1.0A
. High Collector Power Dissipation Capability :
PC=200W (Max. )
. Complementary to 2N5302.
Full PDF Text Transcription for 2N4399 (Reference)
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2N4399. For precise diagrams, and layout, please refer to the original PDF.
SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING.AMPLIFIER, DC-DC CONVERTER, INVERTER AND REGULATOR APPLICATIONS Unit in mm FEATURES . Specification for hp E and VcE...
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ATOR APPLICATIONS Unit in mm FEATURES . Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min.) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max.) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max.) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max.) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability : PC=200W (Max.) .
2N4399 Datasheet
