2N4399 - SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

Datasheet Details

Part number	2N4399
Manufacturer	Toshiba
File Size	114.85 KB
Description	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet	2N4399-Toshiba.pdf

. Specification for hp E and VcE(sat) Up to 30A : hFE=5.0 (Min. ) @ vCE=-4.0V, I C =-30A v CE(sat)="4.0V (Max. ) @ I C=-30A, I B=-6A . Low Saturation Voltage : VCE(sat)=-0.75V (Max. ) @ I C=-10A, Ib=-1.0A VBE(sat)=-1.6V (Max. ) @ I C=-10A, I B=-1.0A . High Collector Power Dissipation Capability : PC=200W (Max. ) . Complementary to 2N5302.

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Published: Jul 16, 2018 |