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2SA1164
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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
&1MAX.
. High Transition Frequency : f x=400MHz(Typ.
. Low VcE(sat) : V CE ( sat )=0. 5V(Max. . Small Collector Output Capacitance : C b=4pF(Max.
. High Speed Switching.
. Designed for Complementary Use with 2SC2754.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
1.2 7
1.2 7
Collector-Base Voltage
VcBO
35
Collector-Emitter Voltage
VCEO
-30
Emitter-Base Voltage
VEBO
-5
Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
ic IB PC
L stg
-100
mA
-50
mA
200
mW
~o~125
-55-125
1. EMITTER 2. COLLECTOR 3.
2SA1164 Datasheet
