| Title | |
| Description | 2SA1164 ) ) ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm &1MAX. . High Transition Frequency : f x=400MHz(Typ. . Low VcE(sat) : V CE ( sat )=0. 5V(Max. . Small Collector Output Capacitance : C b=4pF(Max. . High Speed Switching. . Designed for Complementary Use with 2SC2... |
| Features |
=-5V, I C=0
MIN. -
TYP. MAX. - -0.1 - -0.1
DC Current Gain
hFE (Note)
V CE=-12V, I c=-2mA
Collector-Emitter Saturation Voltage
VcE(sat) IC=-10mA, lB=-lmA
Base-Emitter Voltage
vbe
Vce=-1 2v ยป Ic=- 2mA
Base-Emitter Saturation Voltage
vBE(sat) IC=-10mA, lB=-lmA
Transition Frequency
fT
VCE=-12V, Ic=-10mA
Collector Output Capacitance Cob...
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| Datasheet |
 2SA1164 Datasheet - 79.09KB |
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