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2SA1426 - PNP Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1426 Audio Power Amplifier Applications 2SA1426 Unit: mm • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −35 V VCEO −30 V VEBO −5 V IC −800 mA IB −160 mA PC 1000 mW Tj 150 °C JEDEC ― Tstg −55 to 150 °C JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7D101A temperature/current/voltage and the significant change in temperature, etc.
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