2SA1425 - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	2SA1425
Manufacturer	Toshiba
File Size	131.08 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	2SA1425 Datasheet

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2SA1428	Silicon PNP Epitaxial Type Transistor
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1425 Power Amplifier Applications Driver-Stage Amplifier Applications 2SA1425 Unit: mm • Complementary to 2SC3665. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −80 mA Collector power dissipation PC 1000 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA TOSHIBA ― 2-7D101A temperature, etc.