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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1428
Power Amplifier Applications Power Switching Applications
2SA1428
Unit: mm
• Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SC3668
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
VCEO −50 V
Emitter-base voltage
VEBO −5 V
Collector current
IC −2 A
Base current
IB
−0.2
A
JEDEC
―
Collector power dissipation
PC
1000
mW
JEITA
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note1: Using continuously under heavy loads (e.g.
2SA1428 Datasheet
