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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1426
Audio Power Amplifier Applications
2SA1426
Unit: mm
• High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
VCBO
−35
V
VCEO
−30
V
VEBO
−5
V
IC
−800
mA
IB
−160
mA
PC
1000
mW
Tj
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-7D101A
temperature/current/voltage and the significant change in temperature, etc.
2SA1426 Datasheet
