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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES
• Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.)
• Complementary to 2SC495 and 2SC496.
2SA496
2SA505,
7.9MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°c)
CHARACTERISTIC
Collector-Base Voltage
2SA505 2SA496
Collector-Emitter Voltage
Emitter-Base Voltage Collector Current
2SA505 2SA496
Emitter Current Collector Power Dissipation
Junction Temperature Storage Temperature Range
SYMBOL RATING
-60 v CBO
-40
-50 VCEO
-30
v EBO
-5
ic
-1
IE
1
PC
1
Tj
Tstg
150
-55% 150
UNIT V
V
V A A W °C °C
2.3
2.3
PZ 3
1. EMITTER 2. COLLECTOR (HEAT SINK^ 3. BASE
— TO
12 (
TOSHIBA
Mounting Kit No. AC46C Weight : 0.
2SA496 Datasheet
