2SC1380
2SC1380 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES
- High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700
- Low Noise Figure : NF=2d B(Max. ) (2SC1380A) at Rg =10kn, f=100Hz
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO V CEO V EBO l C h
PC T
T stg
RATING 55 50
100 20
200 150 -55M.50
UNIT V V V m A m A m W
°C °C
1. EMITTER 2. BASE 3. COLLECTOR (CASE)
JEDEC EIAJ TOSHIBA
TO-18 TC-7, TB-8C 2-5A1B
Weight : 0.31g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
Z CB0 ^EBO
VCB =18V, I E=0 VEB=5V, I c =0
DC Current Gain Transition Frequency Collector Output Capacitance
Noise Figure
2SC1380A Only h FE (Note) f T cob NF(1)
NF(2)
VCE=6V, Ic=2m A
VCE=6V, I C=lm A
VCB=6V, I E=0, f=l MHz VCE=6V, I C=0.1m A f=10Hz, Rg=10kfi VCE=6V, Ic=0.1m A f=100Hz, Rg=10kfi
Note: hp E Classification GR : 200^400, BL: 350^700
MIN. TYP MAX. UNIT
- - 0.1 y A
- - 0.1 y A
- 700
-...
