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2SC1380 2SC1380A
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW NOISE AUDIO AMPLIFIER APPLICATIONS. (2SC1380A)
Unit in mm
5.8 MAX 04.95 MAX.
FEATURES
• High Breakdown Voltage : V c -g =50v . High DC Current Gain : 1^=200^700 • Low Noise Figure : NF=2dB(Max. ) (2SC1380A)
at Rg =10kn, f=100Hz
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO V CEO V EBO lC
h
PC T
J
T stg
RATING 55 50
5
100 20
200 150 -55M.50
UNIT V V V
mA mA mW
°C °C
1. EMITTER 2. BASE 3. COLLECTOR (CASE)
JEDEC EIAJ TOSHIBA
TO-18 TC-7, TB-8C 2-5A1B
Weight : 0.
2SC1380 Datasheet
