2SC1617
2SC1617 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
- High Voltage : VCBO=300V
- Wide Safe Oprating Area.
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage
SYMBOL VCBO
Collector-Emitter Voltage v CEO
Emitter-Base Voltage v EBO
Collector Current ic
Emitter Current
Collector Power Dissipation Junction Temperature
Storage Temperature Range p C T
T stg
RATING 300 100
5 7
-7
50 150 -55M.50
UNIT V V V A A
°C °C
1. BASE 2. EMITTER
COLLECTOR (CASE)
- 3, TI 2
- 21A1A
Mounting kit No. AC73 Weight : 12. Og
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current
DC Current Gain
Saturation Voltage
Collector- Emitter Base-Emitter
Transition Frequency
SYMBOL I CB0 l EBO h FE(l) h FE(2) v CE(sat) v BE(sat) f T
TEST CONDITION VCB=250V, I E=0 VEB=5V, lc=0 VCE=5V, I C=1A VCE=5V, I C=7A
I C =5A, I B=0.5A I C=5A, I B=0.5A VCE=5V, I C=0.5A
MIN. TYP. MAX. UNIT
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