Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. Features
- Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A)
- High Speed Switching Time : t stg=1.0ys (Typ.)
- plementary to 2SA1012.
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX. ^3.6±0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25- C) Junction Temperature
Storage Temperature Range
SYMBOL v CBO v CEO v EBO ic pc T i
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING 60 50
5 5 25
150 -55vL50
UNIT V V V A W °C °c
<
23 € CO
1. BASE 2....
