2SC2804
2SC2804 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
. Low Noise Figure : NF=3. 5d B(Typ. ) , f=800MHz . High Power Gain : G pb=16d B(Typ.) , f=800MHz . Excellent Forward AGC Characteristics
Unit in mm
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IB ic PC
Tj
Tstg
RATING 25 20
10 20 200 125
-55-125
UNIT V V V m A m A m W °C °C
1. EMITTER 2, 4. BASE
Z. COLLECTOR
JEDEC
EIAJ
TOSHIBA
2-4F1B
Weight : 0.08g
Marking f HA]
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
ICBO VCB=10V, Ie=0
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage l EBO VEB=2V, Ic=0 V (BR) CEO I C =lm A, IB=0
DC Current Gain Transition Frequency Reverse Transfer Capacitance Power Gain Noise Figure
AGC Voltage h FE f T Crb Gpb NF
VAGC
VCE=10V, Ic=2m A VCe=10V, Ic=2m A VCE=10V, IB=0, f=IMHz VCC=12V, VAGC=3.0V f=800MHz (Fig. 1) VCC=12V, G.R.=-20d B f=800MHz (Fig. 1)
MIN.
- TYP.
- MAX. 0.1
UNIT
M...
