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Toshiba Electronic Components Datasheet

2SC3297 Datasheet

Silicon NPN Transistor

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:.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
CAR RADIO, CAR STEREO OUTPUT STAGE AMPLIFIER
APPLICATIONS.
FEATURES
. Good Linearity of fpg
. Complementary to 2SA1305 and 5W Output
Applications
10.3 MAX
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
(Tc=25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
v EBO
RATING
30
30
IB
PC
L stg
0.3
15
150
-55~150
UNIT
1. BASE
2. COLECTOR
3. EMITTER
TOSHIBA
2-10L1A
Weight : 2.1g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Breakdown Voltage
DC Current Gain
SYMBOL
!CB0
lEBO
TEST CONDITION
V CB =20V, I E=0
V E B=5V, I C =0
v (BR) CEO I C =10mA, I B=0
h FE(l)
(Note)
VC E=2V, I C =0.5A
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : hpE(l) Classification
hFE(2) VC E=2V, I C=2.5A
v CE(sat) I C=2A, IB=0.2A
VB E V CE=2V, I C =0.5A
f T V CE=2V, I C =0.5A
Cob VCB=10V, I E=0, f=lMHz
: 70-140,
120-240
MIN.
-
-
TYP.
-
-
MAX. UNIT
1.0 MA
1.0 nk
30 - - V
70 - 240
25 -
-
- 0.3 0.8 V
- 0.75 1.0 V
- 100 - MHz
- 35 - pF
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604


Toshiba Electronic Components Datasheet

2SC3297 Datasheet

Silicon NPN Transistor

No Preview Available !

2SC3297
-C _ V CE
40 30
20
COMMON EMITTER
Tc = 2 5°C
.15
JO
8
1.0
5
= 3nlA
o
1.6 3.2 4.8 6.4
ao
COLLECTOR- -EMITTER V0LTA3E V C E v( '
1000
500
300
hF E IC
T'
I! COl'MIN BTMTTTF.R
T
i: v GF -2v
To = 75"C
25
COLLECTOR CURRENT
(A)
PC - Ta
=T -* la
INFINITE HEAT SINK
a&
"0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
2.5
o
z
O
* 1-0
o
O
« Q5
IC - V BE
/j
//
/ /Tj
/
f
O
IT)
o
1
K
l
O/
V
1
COMMON
EMITTER
V CE=2V
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
v CE(sat) - *C
-
: common emitter
as
;
ic/ib=io
Q3
--5
T
T
T
1
^\Avai
::
a 05 ,^&t^^ 25
a 03
J E-
OO
O>
0.003 a oi
0.03
ai a3
1
COLLECTOR CURRENT I c (a)
SAFE OPERATING AREA
1 -TT 1
cI'. MAX (PULSED j*
1
I c MAX
11
(CONTINUOUS)
*A\v-
5
4>
«
*1
o
u
?
%h
Ar\
«
oH
t)
Oh \1
-SC- SINGLE NONREPETITIVE
N
J U3
PULSE To = 2 5°C
13LINEiiRL^f W ITH IN CREASE
IN Tl^MPE,RA TU R E
L_l_l
10
<
s
o
o
>
i
30
100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA CORPORATION
605


Part Number 2SC3297
Description Silicon NPN Transistor
Maker Toshiba
PDF Download

2SC3297 Datasheet PDF






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