2SC3298 - Silicon NPN Transistor

Toshiba

Key Features

. High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /rr '-ra J s d :. : X < oL +i s to.

2SC3298 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3298
Manufacturer	Toshiba
File Size	86.13 KB
Description	Silicon NPN Transistor
Datasheet	2SC3298 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SC3298A	Silicon NPN Transistor
2SC3297	Silicon NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /rr '-ra J s d :.: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.5 0.15 20 150 -55-150 1 w1.4 + 025 w0.76- 0.15 1.2 U5 S 2.54±0.25 2.54±0.