| Part Number | 2SC3298 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V(Min)-2SC3298 = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B ·Complement to Type 2SA1306/A/B ·Minimum Lot-to-Lot variations f. TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC3298 160 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC3298A IC= 10mA; IB= 0 180 V 2SC3298B 200 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(on) Base-Emitter On Voltage . |
2SC3298 Datasheet
The 2SC3298 is a NPN Transistor.
| Part Number | 2SC3298 |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Toshiba |
| Overview | : 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : fT=100MHz (Typ . . High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /rr '-ra J s d :.: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 . |