2SC3298A - Silicon NPN Transistor

Toshiba

Download the 2SC3298A datasheet PDF. This datasheet also covers the 2SC3298 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

. High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /rr '-ra J s d :. : X < oL +i s to.

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2SC3298A silicon npn transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (2SC3298-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	2SC3298A
Manufacturer	Toshiba
File Size	86.13 KB
Description	Silicon NPN Transistor
Datasheet	2SC3298A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC3298A	NPN Transistor	INCHANGE
2SC3298	NPN Transistor	INCHANGE
2SC3298B	Silicon NPN Transistor	Toshiba Semiconductor
2SC3298B	COMPLEMENTARY SILICON POWER TRANSISTORS	Motorola
2SC3298B	NPN Transistor	INCHANGE

Other Datasheets by Toshiba

Part Number	Description
2SC3298	Silicon NPN Transistor
2SC3297	Silicon NPN Transistor
2SC3299	Silicon NPN Transistor
2SC3235	Silicon NPN Transistor
2SC3236	Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

: 2SC3298 2SC3298A 2SC3298B ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Transition Frequency : fT=100MHz (Typ . . Complementary to 2SA1306, 2SA1306A, 2SA1306B Unit in mm 1Q3MAX. 7.0 0Z. 2± 0.2 / /rr '-ra J s d :.: X < oL +i s to MAXIMUM RATINGS CHARACTERISTIC Collector-Base Voltage 2SC3298 2SC3298A 2SC3298B Collector-Emitter Voltage 2SC3298 2SC3298A 2SC3298B Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB Tstg RATING 160 180 200 160 180 200 UNIT 1.5 0.15 20 150 -55-150 1 w1.4 + 025 w0.76- 0.15 1.2 U5 S 2.54±0.25 2.54±0.