2SC400 Datasheet PDF (SILICON PNP TRANSISTOR)

2SC400 - SILICON PNP TRANSISTOR

Features

. High Transition Frequency : fx=30GMHz (Typ. ) . Low Collector Output Capacitance : C ^=4pF (Typ . ) . Low Saturation Voltage : V CE ( sat )=0.15V (Typ. ) at I c=10mA, I B=lmA . High Switching Speed : t s tg=300ns (Typ. ) 04.95 MAX. 1" ~ ri| l l r 00.4 5 r < a in d aH' . Complementary to 2SA500. 02 2 3 j.

Datasheet Details

Part number	2SC400
Manufacturer	Toshiba
File Size	36.79 KB
Description	SILICON PNP TRANSISTOR
Datasheet	2SC400 Datasheet
Additional preview pages of the 2SC400 datasheet.

📁 Similar Datasheet

2SC4001 - Silicon NPN Transistor (NEC)

2SC4001 - Silicon NPN Power Transistor (Inchange Semiconductor)

2SC4002 - Silicon NPN Transistor (Sanyo Semicon Device)

2SC4002 - NPN Triple Diffused Planar Silicon Transistor (ON Semiconductor)

2SC4002 - NPN Silicon Triple Diffused Planar Transistor (SEMTECH)

2SC4002 - NPN Silicon Triple Diffused Planar Transistor (Bluecolour)

2SC4003 - NPN Epitaxial Planar Silicon Transistor (GME)

2SC4003 - Silicon NPN Transistor (Sanyo Semicon Device)

2SC4003 - Silicon NPN Power Transistor (Inchange Semiconductor)

2SC4003 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

Full PDF Text Transcription

Click to expand full text

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC400 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm 053 MAX. FEATURES . High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .) . Low Saturation Voltage : V CE ( sat )=0.15V (Typ.) at I c=10mA, I B=lmA . High Switching Speed : t s tg=300ns (Typ.) 04.95 MAX. 1" ~ ri| l l r 00.4 5 r < a in d aH' . Complementary to 2SA500. 02 2 3 j MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage Emitter Base Voltage VCEO VEBO 20 V 5 V 1. EMITTER Collector Current Base Current ic 100 mA 2. BASE IB 20 mA 3.

Published: May 26, 2024 |