Datasheet Summary
:
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm 053 MAX.
Features
. High Transition Frequency : fx=30GMHz (Typ.) . Low Collector Output Capacitance : C ^=4pF (Typ .)
. Low Saturation Voltage : V CE ( sat )=0.15V (Typ.) at I c=10mA, I B=lmA
. High Switching Speed : t s tg=300ns (Typ.)
04.95 MAX.
1"
~ ri| l l r
00.4 5 r
< a in d aH'
. plementary to 2SA500.
3 j
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage Emitter Base Voltage
VCEO VEBO
1. EMITTER
Collector Current...
