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2SC6134 - Silicon NPN Transistor

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2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • • • High DC current gain: hFE = 250 to 400 (IC = 0.3A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 0.65±0.05 1 2 3 0.166±0.05 Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 Characteristics Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note1) PC (Note2) Rating 50 50 30 6 3.0 5.0 0.3 800 500 150 −55 to 150 Unit V V V V A A mW °C °C UFM JEDEC JEITA TOSHIBA ― ― 2-2U1A Weight: 6.6 mg (typ.
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