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2SD1355 - Silicon NPN Transistor

Key Features

  • . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage.

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Datasheet Details

Part number 2SD1355
Manufacturer Toshiba
File Size 82.59 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1355 Datasheet

Full PDF Text Transcription for 2SD1355 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1355. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat...

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own Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO VeBO ic IB PC T J T stg RATING 100 100 5 5 0.5 40 UNIT V V V A A W 150 -55^150 °C °C 10/3 MAX 7.0 03.2 i 0.2 ~g" r~* / '1 * <l to < 2 )" c5 H to c5 » o s +o1 trf "3. \\\, 1.2 » 1.4 H+ 0.25 0.7 s-ai5 ;