: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLI.
Toshiba
2SD1355 - Silicon NPN Transistor
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Satura.
INCHANGE
2SD1355 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collect.