2SD1405 transistor equivalent, silicon npn transistor.
. High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C
Unit in .
FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.0.
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