Datasheet4U Logo Datasheet4U.com

2SD1405 - Silicon NPN Transistor

Features

  • . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max. ) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o.

📥 Download Datasheet

Datasheet preview – 2SD1405

📁 Similar Datasheet

  • 2SD1405 - NPN Transistor (INCHANGE)
  • 2SD1400 - NPN Transistor (INCHANGE)
  • 2SD1401 - NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR (Sanyo Semicon Device)
  • 2SD1402 - NPN Transistor (INCHANGE)
  • 2SD1402 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1403 - NPN Transistor (INCHANGE)
  • 2SD1403 - NPN Triple Diffused Planar Silicon Transistor (Sanyo)
  • 2SD1403 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1404 - Silicon NPN Power Transistor (INCHANGE)
  • 2SD1406 - NPN Transistor (INCHANGE)
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
: —— A SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I C=0.5A . Low V CE ( sat ) of 1.0V (Max.) at Ic=lA, I B=0.02A . Collector Power Dissipation of 25W at Tc=25 C Unit in mm 10:3 MAX. j -r 7.0 . -rr ^ "/ k 03.2±O.2 s CO V X C5 aH o << • 3 to MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VcBO v CE0 VEBO ic RATING 50 50 UNIT 1 1 1.4 ii +0.25 0.76-0.15 , 2.5 4±0.25 i . 1.2 i 2.54 ± a 25 + 1 12 3' Base Current IB 0.5 Collector Power Ta=25 C 2.0 Dissipation Tc=25°C 25 Junction Temperature 150 1. BASE 2. COLLECTOR 3.
Published: |