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2SD1411 - NPN Transistor

Key Features

  • . Low Saturation Voltage : vCE(sat)=0.5V(Max. ) . Complementary to 2SB1018 at I C=4A Unit in mm.

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Datasheet Details

Part number 2SD1411
Manufacturer Toshiba
File Size 115.73 KB
Description NPN Transistor
Datasheet download datasheet 2SD1411 Datasheet

Full PDF Text Transcription for 2SD1411 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SD1411. For precise diagrams, and layout, please refer to the original PDF.

: 2SD1411 SILICON NPN TRIPLE DIFFUSED TYPE HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Co...

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ICATIONS. FEATURES . Low Saturation Voltage : vCE(sat)=0.5V(Max.) . Complementary to 2SB1018 at I C=4A Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCEO VEBO ic 80 Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB 2.0 30 1. BASE 2. COLLECTOR 3 EMITTER Junction Temperature 150 Storage Temperature Range T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL -55-150 TOSHIBA 2-10L1A Weight : 2.1g TEST CONDITION MIN. TYP. MAX.