Full PDF Text Transcription for 2SD523 (Reference)
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2SD523. For precise diagrams, and layout, please refer to the original PDF.
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Satura...
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gh DC Current Gain : h FE=2000 (Min.) (V CE =3V, I C =3A) • Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=3A) • Monolithic Consturction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm JZfc5.0MAX ,. jZfel.OMAX + 0.09 0LO-O.O3 30.2 x 0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range EQUIVALENT CIRCUIT BASEo- SYMBOL VCBO v CEO VEBO IC IB PC Tstg RATING 80 80 UNIT V 0.2 50 150 -65M.50 °C COLLECTOR 1 BASE 2. EMITTER
2SD523 Datasheet
