SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER.
Inchange Semiconductor
2SD523 - Silicon NPN Darlington Power Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·L.
Toshiba
2SD523 - NPN Transistor
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V, .
