2SD523 Datasheet | Specifications & PDF Download

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown VCE=80V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·L

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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (V CE =3V,

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