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2SD686 - NPN Transistor

Features

  • High DC Current Gain : hpE=2000 (Min. (Vce=2V,Ic=1A).
  • Complementary to 2SB676.

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Datasheet Details

Part number 2SD686
Manufacturer Toshiba
File Size 117.38 KB
Description NPN Transistor
Datasheet download datasheet 2SD686 Datasheet

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Full PDF Text Transcription

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:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. FEATURES • High DC Current Gain : hpE=2000 (Min. (Vce=2V,Ic=1A) • Complementary to 2SB676. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation ffc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO V CEO v EBO ic pc T 3 Tstg RATING 100 80 5 4 30 150 -55M.50 UNIT V V V A W °C °C EQUIVALENT CIRCUIT .COLLECTOR ©EMITTER INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. #3.6±0.2 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TOSHIBA TO — 220 AB SC — 4e 2 — 10 A1A Mounting Kit No. AC75 Weight : 1.
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