2SD845
2SD845 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
- High Breakdoun Voltage : Vceo=150V (Min.)
- High Transition Frequency : fx=20MHz (Typ.)
- plementary to 2SB755.
- Remended for 8011 High-Fidelity Audio
Frequency Amplifier Output Stage.
34.3MAX
Unit in mm
MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Emitter Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL Vc BO v CEO v EBO
L stg
RATING UNIT 150 150
12 -12
1, BASE 2. COLLECTOR(HEAT SINK) a, EMITTER
120 150 -55M.50
TOSHIBA
- 34 A 1A
Weight : 10. 8g
ELECTRICAL CHARACTERISTICS CHARACTERISTIC
Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
DC Current Gain
Col lee tor- Emitter Saturation Voltage
(Ta=25°C) SYMBOL I CB0 I EB0
V (BR)CE0 v (BR)EB0 h FE (Note)
VCE(sat)
Base-Emitter Voltage
VB E
Transition Frequency f T
Collector Output Capacitance
Cob
TEST CONDITION VCB=150V, I E=0 VEB=5V, I C =0 I C=0.1A, I B =0
I E=10m A, I E=0
VCE=5V, I C=1A
I C =5A, I B=0.5A
VCE=5V, I C=5A VC E=10V, I C=1A VCB =10V, E=0, f=l MHz
MIN. TYP. MAX....
