2SD880
2SD880 is Silicon NPN Transistor manufactured by Toshiba.
FEATURES
: . High DC Current Gain : h EE =300(Max. )(VCE =5V, Ic=0.5A)
. Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A)
. High Power Dissipation : PC =30W (Tc=25°C)
; plementary to 2SB834.
Unit in mm
10.3MAX. 03.6i O2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage v CBO
Collector-Emitter Voltage Emitter-Base Voltage v CEO
60 v EBO
Collector Current ic
Base Current
Collector Power
Ta=25°C
Dissipation
Tc=25°C
Junction Temperature
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
TO-220AB
Storage Temperature Range stg
-55VL50
ELECTRICAL CHARACTERISTICS (Ta=25°C)
TOSHIBA
2-10A1A
Mounting kit No. AC75 Weight : 1.9g
CHARACTERISTIC Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage
Transition Frequency Collector Output Capacitance
SYMBOL I CB0 I EB0
V (BR) CEO h FE v CE(sat) VBE f T Ccb
TEST CONDITION VCB=60V, I E=0
VEB=7V »...
