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2SD880 Datasheet - Toshiba

Silicon NPN Transistor

2SD880 Features

* : . High DC Current Gain : hEE =300(Max. )(VCE =5V, Ic=0.5A) . Low Saturation Voltage : VCE ( sat )=1.0V(Max.)(IC=3A, Ifi=0.3A) . High Power Dissipation : PC =30W (Tc=25°C) ; Complementary to 2SB834. Unit in mm 10.3MAX. 03.6iO2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

2SD880 Datasheet (92.88 KB)

Preview of 2SD880 PDF

Datasheet Details

Part number:

2SD880

Manufacturer:

Toshiba ↗

File Size:

92.88 KB

Description:

Silicon npn transistor.

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