Datasheet4U Logo Datasheet4U.com

30J122 - Silicon N-Channel IGBT

📥 Download Datasheet

Datasheet Details

Part number 30J122
Manufacturer Toshiba
File Size 557.62 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet 30J122 Datasheet

📁 Similar Datasheet

  • 30J127 - 600V 200A IGBT MOSFET (ETC)
  • 30J324 - Transistor Silicon N-Channel IGBT (Toshiba Semiconductor)
  • 30JL2C41 - HIGH EFFICIENCY DIODE STACK (Toshiba Semiconductor)
Other Datasheets by Toshiba
  • 30J122A - Silicon N-Channel IGBT
  • 30J121 - Silicon N-Channel IGBT
  • 30J126 - Silicon N-Channel IGBT
  • 30J101 - Silicon N-Channel IGBT
  • 30J301 - Silicon N-Channel IGBT
  • 30J311 - Silicon N-Channel IGBT
  • 30J322 - Silicon N-Channel IGBT

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm • Enhancement mode type • High speed: tf = 0.25μs (Typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) VCES VGES IC ICP PC 600 V ±20 V 30 A 100 75 W Junction temperature Storage temperature range Tj 150 °C JEDEC ― Tstg −55~150 °C JEITA ― Note: Using continuously under heavy loads (e.g.
Published: |