30J121 - Silicon N-Channel IGBT

Toshiba

Datasheet Details

Part number	30J121
Manufacturer	Toshiba
File Size	182.80 KB
Description	Silicon N-Channel IGBT
Datasheet	30J121 Datasheet
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GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 2.0 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms VCES VGES IC ICP PC Tj Tstg 600 V ±20 V 30 A 60 170 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16C1C Weight: 4.

Published: Dec 19, 2020 |