30J121
30J121 is Silicon N-Channel IGBT manufactured by Toshiba.
GT30J121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications Fast Switching Applications
Unit: mm
- Fourth-generation IGBT
- Enhancement mode type
- Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
- Low saturation voltage: VCE (sat) = 2.0 V...
