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GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm
• Enhancement mode type • High speed: tf = 0.25μs (Typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1 ms
Collector power dissipation (Tc = 25°C)
VCES VGES
IC ICP
PC
600
V
±20
V
30 A
100
75
W
Junction temperature Storage temperature range
Tj
150
°C
JEDEC
―
Tstg
−55~150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
30J122 Datasheet
