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30J122 - Silicon N-Channel IGBT

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Datasheet Details

Part number 30J122
Manufacturer Toshiba
File Size 557.62 KB
Description Silicon N-Channel IGBT
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www.DataSheet.co.kr GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm • Enhancement mode type • High speed: tf = 0.25μs (Typ.) (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) VCES VGES IC ICP PC 600 V ±20 V 30 A 100 75 W Junction temperature Storage temperature range Tj 150 °C JEDEC ― Tstg −55~150 °C JEITA ― Note: Using continuously under heavy loads (e.g.
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