30J122
30J122 is Silicon N-Channel IGBT manufactured by Toshiba.
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GT30J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J122
4TH GENERATION IGBT
CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
Unit: mm
- Enhancement mode type
- High speed: tf = 0.25μs (Typ.) (IC = 50A)
- Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC =...
