30J126 datasheet by Toshiba.
| Part number | 30J126 |
|---|---|
| Datasheet | 30J126-Toshiba.pdf |
| File Size | 208.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm Fourth-generation IGBT Enhancement mode type Fast switching (FS): tf = 0.05 μs (typ.) Low switching loss.
| Part Number | Description |
|---|---|
| 30J121 | Silicon N-Channel IGBT |
| 30J122 | Silicon N-Channel IGBT |
| 30J122A | Silicon N-Channel IGBT |
| 30J101 | Silicon N-Channel IGBT |
| 30J301 | Silicon N-Channel IGBT |
| 30J311 | Silicon N-Channel IGBT |
| 30J322 | Silicon N-Channel IGBT |
