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GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
Unit: mm
• Fourth-generation IGBT • Enhancement mode type • Fast switching (FS):
High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 1.95 V (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage
Collector current
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
DC 1 ms
VCES VGES
IC ICP
PC
Tj Tstg
600
V
±20
V
30 A
60
90
W
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.
30J126 Datasheet
