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30J126 - Silicon N-Channel IGBT

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Datasheet Details

Part number 30J126
Manufacturer Toshiba
File Size 208.62 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet 30J126 Datasheet
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Full PDF Text Transcription

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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 1.95 V (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms VCES VGES IC ICP PC Tj Tstg 600 V ±20 V 30 A 60 90 W 150 °C −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-16F1A Weight: 5.8 g (typ.
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