30J126
30J126 is Silicon N-Channel IGBT manufactured by Toshiba.
GT30J126
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J126
High Power Switching Applications Fast Switching Applications
Unit: mm
- Fourth-generation IGBT
- Enhancement mode type
- Fast switching (FS):
High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
- Low saturation voltage: VCE (sat) = 1.95 V...
