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A2069 - 2SA2069

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2069 High-Speed Switching Applications DC-DC Converter Applications 2SA2069 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = −0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = −0.14 V (max) • High-speed switching: tf = 37 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation t = 10 s DC Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg −20 −20 −7 −1.5 −2.5 −150 2.0 1.0 150 −55 to 150 V V V A mA W °C °C Note 1: Mounted on an FR4 board (glass epoxy, 1.
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