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Toshiba Electronic Components Datasheet

A2184 Datasheet

Silicon PNP Triple Diffused Type Transistor

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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2184
High Voltage Switching Applications
High voltage: VCEO = -550 V
High speed: tf = 40 ns (typ.) (IC = -0.5 A)
2SA2184
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-550
V
Collector-emitter voltage
VCEO
-550
V
Emitter-base voltage
VEBO -7 V
Collector current
DC
Pulse
IC
ICP
-1
A
-2
Base current
IB -1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
Tj
Tstg
1
20
150
-55 to 150
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
2005-09
1 2017-01-06


Toshiba Electronic Components Datasheet

A2184 Datasheet

Silicon PNP Triple Diffused Type Transistor

No Preview Available !

2SA2184
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Rise time
Switching time Storage time
Symbol
Test Condition
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
VCB = -550 V, IE = 0 A
VEB = -7 V, IC = 0 A
IC = -10 mA, IB = 0 A
VCE = -5 V, IC = -100 mA
VCE = -5 V, IC = -500 mA
IC = -300 mA, IB = -60 mA
IC = -300 mA, IB = -60 mA
VCE = -5 V, IC = -50 mA
VCB = -10 V, IE = 0 A, f = 1 MHz
Min Typ. Max Unit
― ― -10 μA
― ― -1 μA
-550
V
80 300
5 ――
― ― -0.7 V
― ― -1.2 V
27 MHZ
30 pF
tr
IB1
20 μs Input
Output
0.1
IB2 IB2
μs
tstg VCC = -300 V 1.6
Fall time
IB1 = 100 mA, IB2 = 200 mA
tf Duty cycle 1%
40 ns
Marking
A2184
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1: A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
2 2017-01-06


Part Number A2184
Description Silicon PNP Triple Diffused Type Transistor
Maker Toshiba
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A2184 Datasheet PDF






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