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BD135. For precise diagrams, and layout, please refer to the original PDF.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7...
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ATURES . Designed for Complementary Use with BD136, BD138 and BD140. 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage BD135 BD137 BD139 Collector-Emitter Voltage BD135 BD137 BD139 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25 C Tc^60 C Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO Vebo I CM RATING 45 60 80 45 60 80 0.5 1.5 PC L stg 6.5 150 -55-150 UNIT 1. EMITTER Z. COLLECTOR (HEAT S INK) Z. BASE TO— 126 TOSHIBA 2-8P1A Weight : 0.
BD135 Datasheet
