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BD135 Datasheet | Specifications & PDF Download

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BD135 Complementary low-voltage transistor

BD135 - BD136 BD139 - BD140 Complementary low volt.

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BD135 (INCHANGE)

NPN Transistor

isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=
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BD135 (Toshiba)

Silicon NPN Transistor

SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1
(24 views)
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BD135 (UTC)

NPN Transistor

UNISONIC TECHNOLOGIES CO., LTD BD135 Preliminary NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR  DESCRIPTION The UTC BD135 is an NPN
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