BD138 - Silicon PNP Transistor

Toshiba

Download the BD138 datasheet PDF. This datasheet also covers the BD136 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

. Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm.

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BD138 silicon pnp transistor by Toshiba - Datasheet Preview — Note: The manufacturer provides a single datasheet file (BD136-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	BD138
Manufacturer	Toshiba
File Size	104.92 KB
Description	Silicon PNP Transistor
Datasheet	BD138 Datasheet

Full PDF Text Transcription for BD138 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BD138. For precise diagrams, and layout, please refer to the original PDF.

BD136 BD138 IBD140I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD135, BD137 and BD139 7....

View more extracted text

ATURES . Designed for Complementary Use with BD135, BD137 and BD139 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage BD136 BD138 BD140 VCBO Collector-Emitter Voltage BD136 BD138 BD140 Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation Ta=25°C Tc^60°C VcEO VEBO ic ICM Junction Temperature Storage Temperature Range L stg RATING -45 -60 -80 -45 -60 -80 -5 -0.5 -1.5 6.5 150 -55-150 UNIT 1. EMITTER 2. COLLECTOR (HEAT SINK) Z. BASE TO— 126 TOSHIBA Weight : 0.72g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.

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More Datasheets from Toshiba

Part Number	Description
BD135	Silicon NPN Transistor
BD136	SILICON PNP Transistor
BD137	Silicon NPN Transistor
BD139	Silicon NPN Transistor
BD140	Silicon PNP Transistor
BD140	SILICON PNP Transistor