BD237 - Silicon NPN Transistor

Download the BD237 datasheet PDF (BD233 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon npn transistor.

Features

. Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm.

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	BD237
Manufacturer	Toshiba
File Size	117.09 KB
Description	Silicon NPN Transistor
Datasheet	BD237 Datasheet

📁 Similar Datasheet

BD237 - Plastic Medium Power Silicon NPN Transistor (Motorola Inc)
BD237 - Low voltage NPN power transistors (STMicroelectronics)
BD237 - NPN Transistor (Fairchild Semiconductor)
BD237 - EPITAXIAL SILICON POWER TRANSISTORS (CDIL)
BD237 - NPN Transistor (WEITRON)
BD237 - Silicon NPN Power Transistors (Inchange Semiconductor)
BD237 - NPN Transistor (MCC)
BD237 - Transistor (ON Semiconductor)
BD237 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
BD237 - SILICON POWER TRANSISTOR (SavantIC)

Other Datasheets by Toshiba

BD233 - Silicon NPN Transistor
BD234 - Silicon PNP Transistor
BD235 - Silicon NPN Transistor
BD236 - Silicon PNP Transistor
BD238 - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text

: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Complementary Use with BD234, BD236 and BD238 BD233 BD235 IBD237 7.9 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage BD233 BD235 BD237 Collector-Emitter Voltage BD233 BD235 BD237 Emitter-Base Voltage Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO Vebo IC ICM IB PC L stg RATING 45 60 100 45 60 80 25 150 -55-150 UNIT JEDEC 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE TO— 126 TOSHIBA Weight : 0.

Published: Jul 16, 2018 |