BD237 Datasheet | Specifications & PDF Download

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS ECB BD233 BD235 BD237

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NPN Epitaxial Planar Transistors P b Lead(Pb)-Free BD233/235/237 1. EMITTER 2. COLLECTOR 3. BASE 1 23 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC)

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR (NPN) FEATURES Complement to BD234

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BD237 Medium Power Transistors Features: • Epitaxial Silicon Power Transistors. • Intended for Use in Medium Power Linear Switching Applications. TO-

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UNISONIC TECHNOLOGIES CO., LTD BD237 NPN EPITAXIAL SILICON TRANSISTOR 80V, NPN TRANSISTORS  DESCRIPTION The UTC BD237 is an NPN transistor. it us

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BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively 1 TO-126 2.Collector 3.Base

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BD237 (NPN), BD234 (PNP), BD238 (PNP) Preferred Devices Plastic Medium Power Bipolar Transistors Designed for use in 5.0 to 10 W audio amplifiers an

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BD237 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 NPN 。Silicon NPN transistor in a TO-126 Plastic Package.  / Features BD238 。 Complemen

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UNISONIC TECHNOLOGIES CO., LTD BD2378 Preliminary DUAL TRANSISTOR COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  DESCRIPTION The U

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD237/D ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ

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BD235 BD237 Low voltage NPN power transistors Features ■ Low saturation voltage ■ NPN transistors Applications ■ Audio, power linear and switching ap

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: SILICON NPN EPITAXIAL BASE MESA TYPE AUDIO POWER AMPLIFIER APPLICATIONS. VERTICAL DEFLECTION OUTPUT APPLICATION IN TV. FEATURES . Designed for Compl

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package www.datasheet4u.com ·Complement to type

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Plastic Medium Power Bipolar Transistors BD237G (NPN), BD234G (PNP) Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementa

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD233/235/237 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD237 NPN EPITAXIAL PLAN

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