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HBD237 - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBD237, a member of the HBD237_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBD237 is designed for medium power linear and switching applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W

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Datasheet preview – HBD237

Datasheet Details

Part number HBD237
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.82 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD237 Datasheet
Additional preview pages of the HBD237 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD237 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD237 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .........................
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