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HBD237 - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HBD237 datasheet PDF (HBD237_Hi included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn epitaxial planar transistor.

Description

The HBD237 is designed for medium power linear and switching applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W

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Note: The manufacturer provides a single datasheet file (HBD237_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HBD237
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.82 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD237 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD237 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBD237 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .........................
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