Download the HBD237 datasheet PDF. This datasheet also covers the HBD237_Hi variant, as both devices belong to the same npn epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.
The HBD237 is designed for medium power linear and switching applications.
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W
| Part number | HBD237 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 22.82 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBD237 Datasheet
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Note: Below is a high-fidelity text extraction (approx. 800 characters) for HBD237. For precise diagrams, and layout, please refer to the original PDF.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6622-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD237 NPN EPITAXIAL PLANAR TRANSISTOR Descript...
| Part Number | Description |
|---|---|
| HBD238 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HBD136 | PNP POWER TRANSISTORS |
| HBD139 | NPN POWER TRANSISTORS |
| HBD140 | PNP POWER TRANSISTORS |
| HBD437T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD438T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD675 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBD677 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBD678 | NPN EPITAXIAL PLANAR TRANSISTOR |
