This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | HBD237 |
|---|---|
| Datasheet | HBD237 HBD237_Hi Datasheet (PDF) |
| File Size | 22.82 KB |
| Manufacturer | Hi-Sincerity Mocroelectronics |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
|
|
The HBD237 is designed for medium power linear and switching applications. Ratings (Ta=25°C) Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ...................................................................................
See all Hi-Sincerity Mocroelectronics datasheets
| Part Number | Description |
|---|---|
| HBD238 | PNP EPITAXIAL PLANAR TRANSISTOR |
| HBD136 | PNP POWER TRANSISTORS |
| HBD139 | NPN POWER TRANSISTORS |
| HBD140 | PNP POWER TRANSISTORS |
| HBD437T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD438T | COMPLEMENTARY SILICON POWER TRANSISTORS |
| HBD675 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBD677 | NPN EPITAXIAL PLANAR TRANSISTOR |
| HBD678 | NPN EPITAXIAL PLANAR TRANSISTOR |
