| Part number | HBD237 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 22.82 KB |
| Description | NPN EPITAXIAL PLANAR TRANSISTOR |
| Datasheet |
 HBD237 Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HBD237, HBD237_Hi. Please refer to the document for exact specifications by model. |
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The HBD237 is designed for medium power linear and switching applications. Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W Maximum Voltages and Currents BVCBO Collector to Base Voltage 100 V BVCEO Collector to Emitter Voltage 80 V BVEBO Emitter to Base Voltage 5 V BVCER Emitter to Base Voltage 100 V IC Collector Curre
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